Adopt infineon Trenchstop TM H5 series IGBT, the best performance 650 V single-tube IGBT on the market.
Compared to Infineon third generation H3 series IGBT, the turn-on loss Eon and turn-off loss Eoff are reduced by half
1200V SIC SCHOTTKY
DIODE TO
REDUCE HARDWARE LOSS
Sic (Silicon carbon) is the third generation power
conversion technology
Compared to Si Schottky diode, Sic Schottky diode has very small turn-on voltage VF, resulting in much smaller switching loss, close to zero loss.
The reverse recovery time of Sic diode is extremely short, effectively reduce the turn-on loss of switching components and current impact, obtain higher system efficiency and power density, reduce the heat dissipation requirements and EMI impact
OPTIMIZED VIENNA RECTIFIER DESIGN +
INTERLEAVED PARALLEL TECHNOLOGY TO REDUCE LOSS
INDUCTOR VERTICAL
WINDING DESIGN
Inductor core flat winding
compared to traditional inductor winding, enlarging the air contact area of the flat winding, enhance the heat dissipation capability of the inductor, less heat loss